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| PROCESS CPS053 Silicon Controlled Rectifier 2.0 Amp Sensitive Gate SCR Chip PROCESS DETAILS Process Die Size Die Thickness Cathode Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization Glass Passivated Mesa 53 x 53 MILS 8.7 MILS 20 x 10 MILS 7.9 x 7.9 MILS Al - 45,000A Al/Mo/Ni/Ag - 32,000A GEOMETRY GROSS DIER PER 4 INCH WAFER 3,884 PRINCIPAL DEVICE TYPES CS92-2M Series CS223-2M Series MCR22-6 Series 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (4- January 2006) |
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